Sungchil Kang

Name : Sungchil Kang
Graduate year : 2013
Degree : M. S
Affiliation : Hyundai Heavy Industries
E-mail : kangsungchil@korea.ac.kr

Published.

1) Sungchil Kang, Alexander Efremov, Sun Jin Yun, Jinyoung Son, and Kwang-Ho Kwon, “Etching Characteristics and Mechanisms of Mo and Al2O3 Thin Films in O2/Cl2/Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios”, Plasma Chemistry and Plasma Processing, vol. 33, Issue 2(2013), pp. 527 – 538 https://doi.org/10.1007/s11090-013-9435-y

2) Sungchil Kang, Seong-Kyun Jeong, Kwang-Ho Kwon, and Kang-Bak Park, “Neural Network Modeling of Deposition Rate Characteristics of Low Temperature Silicon Nitride Deposited by Inner Two Parallel Coil Inductively Coupled Plasma Chemical Vapor Deposition”, J. Nanosci. Nanotechnol. Vol. 13, 8101-8105, 2013 https://doi.org/10.1166/jnn.2013.8171

Neural Network Modeling of Deposition Rate Characteristics of Low...: Ingenta Connect

In this study, a neural network model for silicon nitride (SiN) deposition process is proposed. SiN thin films were deposited by a direct inner two parallel inductively coupled plasma chemical vapor deposition (ICPCVD) system that can control the activated

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3) Sungchil Kang, Hyun Woo Lee, Mun Pyo Hong, and Kwang-Ho Kwon, “Electrical and mechanical characteristics of room temperature deposited silicon nitride using inner two parallel cylindrical coil inductively coupled plasma chemical vapor deposition”, J. Nanosci. Nanotechnol. Vol. 13, 6326-6332, 2013 https://doi.org/10.1166/jnn.2013.7706

Electrical and Mechanical Characteristics of Room Temperature Dep...: Ingenta Connect

For investigating silicon nitride (SiN) thin film deposition process at room temperature without additional substrate heating, we studied inductively coupled plasma chemical vapor deposition with two inner parallel cylindrical coils which can activate the

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4) Sungchil Kang, Hyun Woo Lee, MunPyo Hong, and Kwang-Ho Kwon, “Characteristics of room temperature silicon nitride deposited by Internal Inductively Coupled Plasma Chemical Vapor Deposition”, J. Nanosci. Nanotechnol. Vol. 14, 6189-6195 (2014) https://doi.org/10.1166/jnn.2014.8816

Characteristics of Room Temperature Silicon Nitride Deposited by ...: Ingenta Connect

The parallel inductively coupled plasma chemical vapor deposition system is used to directly control the activated radical and charged species in the plasma of a silicon nitride thin film, which is deposited at room temperature for flexible displays. By co

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