- Name : Yong-Hyun Ham
- Graduate year : 2013
- Degree : Ph. D
- Affiliation : SEMES
- E-mail : hamcos@korea.ac.kr
Published.
1) Yong-Hyun Ham, Alexander Efremov, Sun Jin Yun, Jun Kwan Kim, Nam-Ki Min, Kwang-Ho Kwon, “Etching characteristics and mechanism of ZnO thin films in inductively coupled HBr/Ar plasma”, Thin Solid Films, Vol. 517, Issue 14, Pages 4242-4245 https://doi.org/10.1016/j.tsf.2009.02.008
2) Yong-Hyun Ham, Alexander Efremov, Nam-Ki Min, Hyun Woo Lee, Sun Jin Yun, and Kwang-Ho Kwon, “Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar plasma”, Japanese Journal of Applied Physics 48 (2009) 08HD04 https://doi.org/10.1143/JJAP.48.08HD04
3) Yong-Hyun Ham, Alexander Efremov, Hyun-Woo Lee, Sun Jin Yun, Nam Ki Min, Kwangsoo Kim, and Kwang-Ho Kwon, “Etching characteristics and mechanism of ZnO and Ga-doped ZnO thin films in inductively coupled HBr/Ar/CHF3 plasma”, Japanese Journal of Applied Physics 49 (2010) 08JB03 http://doi.org/10.1143/JJAP.49.08JB03
4) Yong-Hyun Ham, Alexander Efremov, Hyun Woo Lee, Sun Jin Yun, Nam Ki Min, Kyu-Ha Baek, Lee-Mi Do, and Kwang-Ho Kwon, “Etching Characteristics and Mechanism of Ga-dopped ZnO Thin Films in Inductively-Coupled HBr/X (X = Ar, He, N2, O2) Plasmas”, Vacuum 85 (2011), pp. 1021-1025 https://doi.org/10.1016/j.vacuum.2011.03.009
5) Yong-Hyun Ham, Dmitriy Alexandrovich Shutov, Kyu-Ha Baek, Lee-Mi Do, Kwangsoo Kim, Chi-Woo Lee, Kwang-Ho Kwon, “Surface characteristics of parylene-C films in an inductively coupled O2/CF4 gas plasma, Thin Solid Films, Volume 518 (2010) Pages 6378-6381 https://doi.org/10.1016/j.tsf.2010.03.138
6) Yong-Hyun Ham, Dmitriy Alexandrovich Shutov, and Kwang-Ho Kwon, “Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma”, Applied Surface Science 273 (2013) 287-292 https://doi.org/10.1016/j.apsusc.2013.02.033
7) Yong-Hyun Ham, Dong-Pyo Kim, Kun-Sik Park, Ye-Sul Jeong, Ho-Jin Yun, Kyu-Ha Baek, Kwang-Ho Kwon, Kijun Lee, Lee-Mi Do, “Dual etch processes of via and metal paste filling for through silicon via process”, Thin Solid Films 519 (2011) 6727-6731 https://doi.org/10.1016/j.tsf.2011.01.406
8) Y.-H. Ham, D. -P. Kim, K.-H. Baek, K.-S. Park, M. Kim, K.-H. Kwon, K. Lee, and L.-M. Do, “Formation of metal and dielectric liners using a solution process for deep trench capacitors”, J. Nanosci. Nanotechnol. Vol. 12, 5897-5901, 2012 https://doi.org/10.1166/jnn.2012.6317
9) Y-H Ham, D-P Kim, K-H Baek, K-S Park, K-H Kwon and L M Do, “Analysis of metal filling and liner formation mechanism of blind via with nano-Ag particles for TSV (Through silicon via) inter connection”, Journal of Micromechanics and Microengineering, 22(2012) 075013-1 https://doi.org/10.1088/0960-1317/22/7/075013
10) Y.-H. Ham, Youngkeun Kim, K.-H. Baek, L. M. Do, K.-H. Kwon, and Kang-Bak Park, “Analysis of Etching Mechanism and Etched Slope Control of Silicon for Nanoimprinting Lithography”, Journal of Nanoscience and Nanotechnology, Vol. 11, 6523-6527, 2011, https://doi.org/10.1166/jnn.2011.4357
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