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Jinhyuk Kim Name : Jinhyuk Kim Degree : M.S candidate E-mail : kimjh9621@korea.ac.kr Research area : High aspect ratio oxide etching characteristics using C6F12O with low-GWP and comparative study of 2 MHz and 13.56 Mhz Published. 1) Jinhyuk Kim, Gilyoung Choi, and Kwang0Ho Kwon, : “High-aspect-ratio oxide etching using CF4/C6F12O) plasma in an inductively coupled plasma etching system with low-frequency bi.. 2023. 11. 13.
Gil-Young Choi Name : Gil-Young Choi Degree : Ph. D. Candidate E-mail : confidencism@korea.ac.kr Research area : A study on the high-aspect-ratio oxide etching characteristics using a Hexafluoroisobutylene with a low global warming potential 2023. 11. 13.
Changmok Kim Name : Changmok Kim Graduate year : 2019 Degree : M. S Affiliation: SEMES E-mail:cmke@korea.ac.kr Published. 1) Changmok Kim, Alexander Efremov, Jaemin Lee, Il Ki Han, Young-Hwan Kim, and Kwang-Ho Kwon, “Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl2 + Ar inductively coupled plasma with various HBr/Cl2 mixing ratios”, Thin Solid Films, Vol.660, 590-595, (2018). h.. 2020. 8. 27.
Jihun Kim Name : Jihun Kim Graduate year : 2019 Degree : M. S Affiliation : - E-mail : jm97kjh@korea.ac.kr 2020. 8. 27.
Moonkeun Kim Name : Moonkeun Kim Graduate year : 2014 Degree : Ph. D Affiliation : Samsung Electronics E-mail : moonkeun@korea.ac.kr Published 1) Moonkeun Kim, Alexander Efremov, Hyun Woo Lee, Nam Ki Min, Hyung-Ho Park, Kyu-Ha Baek, and Kwang-Ho Kwon, “Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas” Japanese Journal of Applied Physics 49 (2010.. 2020. 8. 27.
Inwoo Chun Inwoo Chun Graduate year : 2014 (M. S), 2020 (Ph. D) Degree : Ph. D Affiliation : Korea University, Research Professor E-mail : chun-inwoo@korea.ac.kr Published. 1) Inwoo Chun, Alexander Efremov, Geun Young Yeom, and Kwang-Ho Kwon “A Comparative Study of CF4/O2/Ar and C4F8/O2/Ar Plasmas for Dry Etching Applications” Thin Solid Films, 579 (2015) 136-143 https://doi.org/10.1016/j.tsf.2015.02.060 R.. 2020. 8. 27.

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