- Name : Yong-Hyun Ham
- Graduate year : 2013
- Degree : Ph. D
- Affiliation : SEMES
- E-mail : hamcos@korea.ac.kr
Published.
1) Yong-Hyun Ham, Alexander Efremov, Sun Jin Yun, Jun Kwan Kim, Nam-Ki Min, Kwang-Ho Kwon, “Etching characteristics and mechanism of ZnO thin films in inductively coupled HBr/Ar plasma”, Thin Solid Films, Vol. 517, Issue 14, Pages 4242-4245 https://doi.org/10.1016/j.tsf.2009.02.008
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2) Yong-Hyun Ham, Alexander Efremov, Nam-Ki Min, Hyun Woo Lee, Sun Jin Yun, and Kwang-Ho Kwon, “Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar plasma”, Japanese Journal of Applied Physics 48 (2009) 08HD04 https://doi.org/10.1143/JJAP.48.08HD04
Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma - IOPscience
A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4–10 mTorr) and input power (400–700 W) at fixed bias power of 150 W and initial mi
iopscience.iop.org
3) Yong-Hyun Ham, Alexander Efremov, Hyun-Woo Lee, Sun Jin Yun, Nam Ki Min, Kwangsoo Kim, and Kwang-Ho Kwon, “Etching characteristics and mechanism of ZnO and Ga-doped ZnO thin films in inductively coupled HBr/Ar/CHF3 plasma”, Japanese Journal of Applied Physics 49 (2010) 08JB03 http://doi.org/10.1143/JJAP.49.08JB03
Etching Characteristics and Mechanism of ZnO and Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF3 Plasma - IOPscience
The etching characteristics and mechanisms of ZnO and Ga-doped ZnO (Ga-ZnO) thin films in a HBr/Ar/CHF3 inductively coupled plasma were investigated. The etching rate of ZnO was measured as a function of the CHF3 mixing ratio in the range of 0–15% in a H
iopscience.iop.org
4) Yong-Hyun Ham, Alexander Efremov, Hyun Woo Lee, Sun Jin Yun, Nam Ki Min, Kyu-Ha Baek, Lee-Mi Do, and Kwang-Ho Kwon, “Etching Characteristics and Mechanism of Ga-dopped ZnO Thin Films in Inductively-Coupled HBr/X (X = Ar, He, N2, O2) Plasmas”, Vacuum 85 (2011), pp. 1021-1025 https://doi.org/10.1016/j.vacuum.2011.03.009
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5) Yong-Hyun Ham, Dmitriy Alexandrovich Shutov, Kyu-Ha Baek, Lee-Mi Do, Kwangsoo Kim, Chi-Woo Lee, Kwang-Ho Kwon, “Surface characteristics of parylene-C films in an inductively coupled O2/CF4 gas plasma, Thin Solid Films, Volume 518 (2010) Pages 6378-6381 https://doi.org/10.1016/j.tsf.2010.03.138
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6) Yong-Hyun Ham, Dmitriy Alexandrovich Shutov, and Kwang-Ho Kwon, “Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O2/CHF3 gas plasma”, Applied Surface Science 273 (2013) 287-292 https://doi.org/10.1016/j.apsusc.2013.02.033
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7) Yong-Hyun Ham, Dong-Pyo Kim, Kun-Sik Park, Ye-Sul Jeong, Ho-Jin Yun, Kyu-Ha Baek, Kwang-Ho Kwon, Kijun Lee, Lee-Mi Do, “Dual etch processes of via and metal paste filling for through silicon via process”, Thin Solid Films 519 (2011) 6727-6731 https://doi.org/10.1016/j.tsf.2011.01.406
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8) Y.-H. Ham, D. -P. Kim, K.-H. Baek, K.-S. Park, M. Kim, K.-H. Kwon, K. Lee, and L.-M. Do, “Formation of metal and dielectric liners using a solution process for deep trench capacitors”, J. Nanosci. Nanotechnol. Vol. 12, 5897-5901, 2012 https://doi.org/10.1166/jnn.2012.6317
Formation of Metal and Dielectric Liners Using a Solution Process...: Ingenta Connect
We demonstrated the feasibility of metal and dielectric liners using a solution process for deep trench capacitor application. The deep Si trench via with size of 10.3μm and depth of 71μm were fabricated by Bosch process in deep reactive ion etch (DRIE)
www.ingentaconnect.com
9) Y-H Ham, D-P Kim, K-H Baek, K-S Park, K-H Kwon and L M Do, “Analysis of metal filling and liner formation mechanism of blind via with nano-Ag particles for TSV (Through silicon via) inter connection”, Journal of Micromechanics and Microengineering, 22(2012) 075013-1 https://doi.org/10.1088/0960-1317/22/7/075013
10) Y.-H. Ham, Youngkeun Kim, K.-H. Baek, L. M. Do, K.-H. Kwon, and Kang-Bak Park, “Analysis of Etching Mechanism and Etched Slope Control of Silicon for Nanoimprinting Lithography”, Journal of Nanoscience and Nanotechnology, Vol. 11, 6523-6527, 2011, https://doi.org/10.1166/jnn.2011.4357
Analysis of Etching Mechanism and Etched Slope Control of Silicon...: Ingenta Connect
In the nanoimprint lithography (NIL) process, profile control of imprint masters is a very important task. Therefore, we attempted to control the etched slope of imprint masters as a function of adding O2 to CF4 plasma. Etched profile mechanisms and relati
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