Reseach Area/Plasma etching characteristics2 Related paper 1) Sun Jin Yun, Kwang-Ho Kwon, Byung-Sun Park, Young-Jin Jeon, and Sang-Won Kang, "The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE", Microelectronic Engineering, Vol. 13, 115(1991) https://doi.org/10.1016/0167-9317(91)90060-Q Redirecting linkinghub.elsevier.com 2) Hyung-Ho Park, Kwang-Ho Kwon, Sang-Hwan Lee, Sahn Nahm, Hee-Tae Lee, Kyoung-Ik Cho.. 2020. 8. 27. Plasma etching characteristics Plasma etching is one of the main applications of plasma treatment and the plasma system (known as a ‘plasma etcher’) is commonly used in production of semiconductor devices. During plasma etching, the highly energetic and reactive species produced from a selected process gas, such as O2 or a fluorine bearing gas, bombard and react with the sample surface and, as a result, the materials at the s.. 2020. 8. 27. 이전 1 다음
