Reseach Area/Sensor and Electrical device2 Related paper 1) Seung-Youl Kang, Jin Ho Lee, Yoon-Ho Song, Kyong-Ik Cho, Bo-Woo Kim, Kwang-Ho Kwon, and Dong-Keun Kim, “Fabrication of Silicon Field-Emitter Arrays by Using Low-Temperature Processes”, Journal of Korean Physical Society, vol. 35, July 1999, S444 – S446 https://www.koreascience.or.kr/article/CFKO199811920981471.page Fabrication of Silicon Field Emitter Arrays Using Low Temperature Processes -P.. 2020. 8. 28. Sensor and Electrical device In this study, the high-performance transparent Al:InZnSnO /InZnO/Al:InZnSnO (AIZTO/IZO/AIZTO) tri-layer thin-film phototransistors are reported. They show a high field-effect mobility of 40.1 cm2/V·s and an excellent high photoresponsivity of 25,000 A/W, a photosensitivity of 3.3×107, a specific detectivity of 4.3×1017 cm·Hz1/2·W-1 under the illumination at 460 nm with an intensity of 140 μW/cm.. 2020. 8. 27. 이전 1 다음