본문 바로가기
Reseach Area/Sensor and Electrical device

Related paper

by 플라즈마응용연구실 2020. 8. 28.

1) Seung-Youl Kang, Jin Ho Lee, Yoon-Ho Song, Kyong-Ik Cho, Bo-Woo Kim, Kwang-Ho Kwon, and Dong-Keun Kim, “Fabrication of Silicon Field-Emitter Arrays by Using Low-Temperature Processes”, Journal of Korean Physical Society, vol. 35, July 1999, S444 S446 https://www.koreascience.or.kr/article/CFKO199811920981471.page

 

Fabrication of Silicon Field Emitter Arrays Using Low Temperature Processes -Proceedings of the Materials Research Society o

 

www.koreascience.or.kr

 

2) Leonid Berezhinsky, Kwang-Ho Kwon, and Byung-Sun Park, “Infrared cut filter”, Japan Journal of Applied Physics, Vol. 40, p.5953-5954, Part 1, No. 10, October, 2001 https://iopscience.iop.org/article/10.1143/JJAP.40.5953/meta

 

Infrared-Cut Filter - IOPscience

An infrared-cut filter for TV and video cameras was calculated and fabricated. The filter contains 29 alternating SiO2 and TiO2 layers. A real filter has a transmittance of 90% in the 400–650 nm range and 1% in the 700–1000 nm range.

iopscience.iop.org

 

3) Leonid Berezhinsky, Svetlana Vlaskina, Vladimir Vlaskin, Sang Wuk Lee, Dong Hyuk Shin, Kwang-Ho Kwon, Byung-Sun Park, “Energy Level Structure of Amorphous Silicon Carbide”, 7, Vol. 41, p.4458-4461, Part 1, No. 7A, July, 2002 https://iopscience.iop.org/article/10.1143/JJAP.41.4458/meta

 

Energy Level Structure of Amorphous Silicon Carbide - IOPscience

The photoluminescence spectra of amorphous SiC films have been studied. The films were fabricated by the plasma-enhanced chemical vapor deposition method. The energy scheme of amorphous SiC has been proposed. This scheme contains a donor state at 0.1 eV an

iopscience.iop.org

 

4) V. I. Vlaskin, L. I. Berezhinsky, C. I. Vlaskina, D. H. Shin and K.-H. Kwon, “Efficiency of Photoconductivity in Amorphous Silicon-carbide Films”, Journal of the Korean Physical Society, Vol. 42, No. 3, March 2003, pp. 391 393. https://www.researchgate.net/profile/Vi_Vlaskin/publication/290228146_Efficiency_of_photoconductivity_in_amorphous_silicon-carbide_films/links/571f540308aed056fa23366d/Efficiency-of-photoconductivity-in-amorphous-silicon-carbide-films.pdf

 

5) Kwang-Ho Kwon, Jun-Kyu Yang, Hyung-Ho Park, Jongdae Kim, and Tae Moon Roh, “Rare-earth gate oxides for GaAs MOSFET application”, Applied Surface Science, 252 (2006) 7624 7630 https://doi.org/10.1016/j.apsusc.2006.03.056

 

Redirecting

 

linkinghub.elsevier.com

 

6) Kwang-Ho Kwon, Chang Ki Lee, Jun-Kyu Yang, Sun Gyu Choi, Ho Jung Chang, Hyeongtag Jeon, Hyung-Ho Park, “Effective formation of interface controlled Y2O3 thin film on Si (100) in a metal-(ferroelectric)-insulator-semiconductor structure”, Microelectronic Engineering 85 (2008) 1781 1785 https://doi.org/10.1016/j.mee.2008.05.004

 

Redirecting

 

linkinghub.elsevier.com

 

7) Kwang-Ho Kwon, Chang Ki Lee, Jun-Kyu Yang, Sun Gyu Choi, Ho Jung Chang, Hyeongtag Jeon, Hyung-Ho Park, Effective formation of interface controlled Y2O3 thin film on Si (100) in a metal-(ferroelectric)-insulator-semiconductor structure”, Microelectronic Engineering 85 (2008) 1781 1785 https://doi.org/10.1016/j.mee.2008.05.004

 

Redirecting

 

linkinghub.elsevier.com

 

8) Jae Sung Kim, Myung Jin Lee, Moon-Sik Kang, Kum-Pyo Yoo, Kwang-Ho Kwon, V. R. Singh, and Nam Ki Min, “Fabrication of high-speed polyimide-based humidity sensor using anisotropic and isotropic etching with ICP”, Thin Solid Films, Vol. 517, Issue 14, Pages 3879-3882 (29 May 2009) https://doi.org/10.1016/j.tsf.2009.01.129

 

Redirecting

 

linkinghub.elsevier.com

 

9) Myung Jin Lee, Nam-Ki Min, Kum-Pyo Yoo, Ki-Young Kwak, and Kwang-Ho Kwon, Microhotplate-based High-Speed Polyimide Capacitive Humidity Sensors, Sensor Letters, Vol. 7, No. 4, pp. 517 522 https://doi.org/10.1166/sl.2009.1102

 

Microhotplate-Based High-Speed Polyimide Capacitive Humidity Sens...: Ingenta Connect

Polyimide thin films are locally cured on a sensor chip using MEMS microhotplates as an alternative solution to the conventional thermal curing and evaluated as high-speed humidity sensor materials. The polyimide locally cured at a temperature over 350 °C

www.ingentaconnect.com

 

10) Yong-Hyun Ham, Dong-Pyo Kim, Kun-Sik Park, Ye-Sul Jeong, Ho-Jin Yun, Kyu-Ha Baek, Kwang-Ho Kwon, Kijun Lee, Lee-Mi Do, “Dual etch processes of via and metal paste filling for through silicon via process”, Thin Solid Films 519 (2011) 6727-6731 https://doi.org/10.1016/j.tsf.2011.01.406

 

Redirecting

 

linkinghub.elsevier.com

 

11) Yong-Hyun Ham, Dong-Pyo Kim, Kyu-Ha Baek, Kun-Sik Park, Moonkeun Kim, Kwang-Ho Kwon, Kijun Lee, and Lee-Mi Do, “Metal/Dielectric Liner Formation by a Simple Solution Process for through Silicon via Interconnection”, Electrochemical and Solid-State Letters, 15 (5) H145-H147 (2012) https://doi.org/10.1149/2.esl113678

 

12) Y.-H. Ham, D. -P. Kim, K.-H. Baek, K.-S. Park, M. Kim, K.-H. Kwon, K. Lee, and L.-M. Do, “Formation of metal and dielectric liners using a solution process for deep trench capacitors”, J. Nanosci. Nanotechnol. Vol. 12, 5897-5901, 2012 https://doi.org/10.1166/jnn.2012.6317

 

Formation of Metal and Dielectric Liners Using a Solution Process...: Ingenta Connect

We demonstrated the feasibility of metal and dielectric liners using a solution process for deep trench capacitor application. The deep Si trench via with size of 10.3μm and depth of 71μm were fabricated by Bosch process in deep reactive ion etch (DRIE)

www.ingentaconnect.com

 

13) Y-H Ham, D-P Kim, K-H Baek, K-S Park, K-H Kwon and L M Do, “Analysis of metal filling and liner formation mechanism of blind via with nano-Ag particles for TSV (Through silicon via) inter connection”, Journal of Micromechanics and Microengineering, 22(2012) 075013-1 https://doi.org/10.1088/0960-1317/22/7/075013

 

14) Park, Chang-Sun; Choi, Sun Gyu; Park, Hyung-Ho; Jang, Jin-Nyoung; Hong, MunPyo; Kwon, Kwang-Ho, “Compensation effect of boron and nitrogen co-doping on the hardness and electrical resistivity of diamond-like carbon films prepared by magnetron sputtering deposition”, Journal of Materials Research, Vol. 27, No. 23, Dec 14, 2012 https://www.jvejournals.com/article/10616

 

Bond graph-based analysis of energy conversion in vibration-piezoelectricity coupling and its application to a cantilever vibra

The energy flow in a piezoelectric vibration energy harvester (VEH) involves both the mechanical domain and the electrical domain. To better understand the vibration-piezoelectricity coupling of this device, a unified description approach based on the bond

www.jvejournals.com

 

15) Chang-Sun Park, Sun Gyu Choi, Jin-Nyoung Jang, MunPyo Hong, Kwang-Ho Kwon, Hyung-Ho Park, Effect of boron and silicon doping on the surface and electrical properties of diamond like carbon films by magnetron sputtering technique”, Surface & Coatings Technology, 231 (2013) 131-134 https://doi.org/10.1016/j.surfcoat.2012.01.014

 

Redirecting

 

linkinghub.elsevier.com

 

16) H. P. Hong, K. H. Jung, J. H. Kim, K-H Kwon, C. J. Lee, K. N. Yun, and N. K. Min, “Percolated pore networks of oxygen plasma-activated multi-walled carbon nanotubes for fast response, high sensitivity capacitive humidity sensors”, Nanotechnology 24 (2013) http://dx.doi.org/10.1088/0957-4484/24/8/085501

 

17) Myung Jin Lee, Hyun Pyo Hong, Kwang-Ho Kwon, Chan Won Park, Nam Ki Min, Fast-speed, high-sensitivity polyimide humidity sensors with superhydrophilic carbon nanotube network electrodes”, Sensors and Actuators B 185 (2013) 97-104 https://doi.org/10.1016/j.snb.2013.04.117

 

Redirecting

 

linkinghub.elsevier.com

 

18) Chang-Sun Park, Hong-Sub Lee, Dong Il Shim, Hyung hee Cho, Hyung-Ho Park and Kwang-Ho Kwon, “Oxygen-deficiency-dependent Seebeck coefficient and electrical properties of mesoporous La0.7Sr0.3MnO3-x films”, Journal of Materials Chemistry A, 4, 4433-4439 (2016) http://dx.doi.org/10.1039/c5ta09487a

 

The oxygen-deficiency-dependent Seebeck coefficient and electrical properties of mesoporous La0.7Sr0.3MnO3−x films

The thermoelectric power factor of La0.7Sr0.3MnO3 (LSMO) is closely related to its oxygen-deficient nature. In this study, the oxygen content of mesoporous LSMO films was controlled using various annealing atmospheres (oxygen, nitrogen, air, and argon) to

pubs.rsc.org

 

19) Woojae Han, Byungwook Yoo, Kwang-Ho Kwon, Hyung Hee Cho, and Hyung-Ho Park, “Fluorine ligand exchange effect in poly (vinylidenefluoride-co-hexafluoropropylene) with embedded fluorinated barium titanate nanoparticles” Thin Solid Films, Vol 619, 17-24 (2016) https://doi.org/10.1016/j.tsf.2016.10.043

 

Redirecting

 

linkinghub.elsevier.com

 

20) Boung Jun Lee, Byung Jun Lee, Jongchan Lee, Ji-Woon Yang, and Kwang-Ho Kwon, “Effects of plasma treatment on the electrical reliability of multilayer MoS2 field-effect transistors”,Thin Solid Films, vol.637, 32-36 (2017) https://doi.org/10.1016/j.tsf.2017.02.014

 

Redirecting

 

linkinghub.elsevier.com

 

21) Junmyung Lee, Jihun Kim, Byung Jun Lee, Jongchan Lee, Hyun Woo Lee, Min-Hee Hong, Hyung-Ho Park, Dong Il Shim, Hyung Hee Cho, and Kwang-Ho Kwon, “Characterization of Mesoporous Silica Thin Films for Application to Thermal Isolation Layer”, Thin Solid Films, Vol.660, 715-719, (2018). https://doi.org/10.1016/j.tsf.2018.04.001

 

Redirecting

 

linkinghub.elsevier.com

 

22) Jongchan Lee, Jaehyun Moon, Jae-Eun Pi, Seong-Deok Ahn, Himchan Oh, Seung-Youl Kang, and Kwang-Ho Kwon, “High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition”, Applied physics letters, Vol.113, 112102, (2018). https://doi.org/10.1063/1.5041029

 

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

Stoichiometric crystalline binary metal oxide thin films can be used as channel materials for transparent thin film transistors. However, the nature of the process used to fabricate these films cau...

aip.scitation.org

 

'Reseach Area > Sensor and Electrical device' 카테고리의 다른 글

Sensor and Electrical device  (0) 2020.08.27