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Reseach Area/Plasma etching characteristics

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by 플라즈마응용연구실 2020. 8. 27.

1) Sun Jin Yun, Kwang-Ho Kwon, Byung-Sun Park, Young-Jin Jeon, and Sang-Won Kang, "The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE", Microelectronic Engineering, Vol. 13, 115(1991) https://doi.org/10.1016/0167-9317(91)90060-Q

 

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2) Hyung-Ho Park, Kwang-Ho Kwon, Sang-Hwan Lee, Sahn Nahm, Hee-Tae Lee, Kyoung-Ik Cho, Oh-Joon Kwon, and Young Il Kang, "A Study on Modified Silicon Surface after CHF3/C2F6 Reactive Ion Etching", ETRI journal, vol. 16, No. 1, p45-57, (1994) https://doi.org/10.4218/etrij.94.0194.0014

 

A Study on Modified Silicon Surface after CHF3/C2F6 Reactive Ion Etching

The effects of reactive ion etching (RIE) of SiO2 layer in CHF3 / C2F6 on the underlying Si surface have been studied by X‐ray photoelectron spectroscopy (XPS), secondary ion mass spectrometer, Ruthe...

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3) Kwang-Ho Kwon, Hyung-Ho Park, Kyung-Soo Kim, Chang-Il Kim, and Yung-Kwon Sung, "Recovery of silicon surface after reactive ion etching of SiO2 using CHF3/C2F6 plasma", Japanese J. Appl. Phys, vol. 35, part 1, no. 3, 1611 1616, (1996) https://iopscience.iop.org/article/10.1143/JJAP.35.1611/meta

 

Recovery of Silicon Surface after Reactive Ion Etching of SiO2 using CHF3/C2F6 Plasma - IOPscience

The effects of SF6 or NF3 gas plasma and subsequent rapid thermal anneal (RTA) treatment for the recovery of modified silicon surfaces after reactive ion etching (RIE) with CHF3/ C2F6 plasma were investigated using X-ray photoelectron spectroscopy and seco

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4) Il-Sup Jin, Hyung-Ho Park, Kwang-Ho Kwon, and Chang-Il Kim, " Passivation role of sulfur and etching behavior in plasma etched TiW using SF6 and BCl3 gases", Microelectronic Engineering, 33, pp. 223-229 (1997) https://doi.org/10.1016/S0167-9317(96)00049-4

 

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5) Kwang-Ho Kwon, Chang-Il Kim, Sun Jin Yun, Guen-Yong Yeom, "Etching Properties of Pt Thin Films by inductively coupled Plasma", Journal of Vacuum Science & Technology A. vol. 16, no. 5, pp. 2772 2776, (1998) https://doi.org/10.1116/1.581420

 

Etching properties of Pt thin films by inductively coupled plasma

The inductively coupled plasma etching of platinum with Ar/Cl2 gas chemistries is described. X-ray photoelectron spectroscopy (XPS) is used to investigate the chemical binding states of the etched ...

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6) Kyu-Ha Baek, Kwang-Ho Kwon, Sun Jin Yun, Chang-il Kim, Jong-Moon Park, Yong-Sun Yoon, and Kee -Soo Nam, “ The role of Sulfur during Mo Etching Using SF6 and Cl2 gas chemistries”, Journal of Materials Science Letters, vol 17, pp. 1483 1486, Sept. 1998 https://link.springer.com/article/10.1023/A:1026434619677

 

7) Kwang-Ho Kwon, Seung-Youl Kang, Sang-Ho Park, Hee-Kyung Sung, Dong-Keun Kim, and Jong-Ha Moon, “Additive Oxygen Effects in Cl2 Plasma Etching of Chrome films”, Journal of Materials Science Letters, vol 18, pp. 1197-1200, Aug. 1, 1999 https://doi.org/10.1023/A:1006642016630

 

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8) Byungwhan Kim, Kwang-Ho Kwon, and Sang-Ho Park, “Characterization of Metal-Masked Silica Etch Process in a CHF3/CF4 Inductively Coupled Plasma”, The Journal of Vacuum Science and Technology A 17(5), Sep/Oct (1999), pp. 2593 2597. https://doi.org/10.1116/1.581917

 

Characterizing metal-masked silica etch process in a CHF3/CF4 inductively coupled plasma

A silica etch process conducted using a CHF3/CF4 inductively coupled plasma is characterized. This was accomplished by employing a statistical experimental design in conjunction with neural network...

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9) Nam-Hoon Kim, Chang-Il Kim, Eui-Goo Chang, and Kwang-Ho Kwon, “A Study on the Suppression of Etch Residues by O2 Gas Addition in Dry Etching of Pt Film”, Journal of Korean Physical Society, vol. 35, December 1999, pp. S806 S809 https://link.springer.com/journal/40042/volumes-and-issues

 

Journal of the Korean Physical Society | Volumes and issues

Volumes and issues listings for Journal of the Korean Physical Society

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10) J, Y, Park, H. S. Kim, D. H. Lee, K.-H. Kwon, G. Y. Yeom, ”A study on the etch characteristics of ITO thin film using inductively coupled plasmas”, Surface and Coating Technology, vol. 131, no. 1-3, Sept 2000, pp. 247-251 https://doi.org/10.1016/S0257-8972(00)00788-X

 

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11) Kwang-Ho Kwon, Seung-Youl Kang, Geun-Young Yeom, Nam-Kwan Hong, and Jin Ho Lee, “Etch Characteristics of Pt by using Cl2/Ar/O2 Gas Mixtures”, Journal of The Electrochemical Society, 147(5) pp. 1807-1809 (2000) https://iopscience.iop.org/article/10.1149/1.1393438/meta

 

Etch Characteristics of Pt Using Cl2 / Ar /  O 2 Gas Mixtures - IOPscience

 

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12) Jung-Woo Seo, Do-Haing Lee, Won-Jae Lee, Byung-Gon Yu, Kwang-Ho Kwon, Geun-Young Yeom, Eui-Goo Chang and Chang-Il Kim, “Etching Characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma”, J. Vac. Sci, Technol. A 18(4), pp. 1354-1358, Jul/Aug 2000 https://doi.org/10.1116/1.582353

 

Etching characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma

Among the ferroelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, the SrBi2Ta2O9 (SBT) thin film is appropriate as a memory capacitor...

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13) Seung-Youl Kang, Kwang-Ho Kwon, Sang-Kyun Lee, Moon-Youn Jung, Young-Rae Cho, Yoon-Ho Song, Jin Ho Lee, and Kyoung-Ik Cho, “Etch Characteristics of Cr by using Cl2/O2 Gas Mixtures with Electron Cyclotron Resonance Plasma”, Journal of The Electrochemical Society, 148(5) pp. G237-G240, 2001 https://iopscience.iop.org/article/10.1149/1.1359204/meta

 

 

14) K. H. Park, Sangsuk Lee, K.-H. Kwon, and Jong H. Moon, “The effect of CF4 and CHF3 gas on the etching characteristics of Er-doped glass”, Journal of Materials Science Letters, Vol 20(6), pp. 565-568, 1 March, 2001 https://link.springer.com/article/10.1023/A:1010945004119

 

 

15) Chang-Seok Oh, Chang-Il Kim, and Kwang-Ho Kwon, “Etch Characteristics of CeO2 Thin Films as a Buffer Layer for the Application of FRAM”, J. Vac. Sci, Technol. A19(4), pp. 1068 1071, Jul/Aug, 2001 https://doi.org/10.1116/1.1376703

 

Etch characteristics of CeO2 thin films as a buffer layer for the application of ferroelectric random access memory

Cerium oxide (CeO2) thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in metal–ferroelectric–insulator–silicon structures for ferroelectric random ac...

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16) Kwang-Ho Kwon, Seung-Youl Kang, Sang-Kyun Lee, Nam-Kwan Hong, Sahn Nahm, and Young-Sik Kim, “Etching Characteristics of Ba(Mg1/3Ta2/3)O3 film by using Cl2/SF6-electron cyclotron resonance plasma”, Journal of The Electrochemical Society, 149, 5 C280-C283, 2002 https://iopscience.iop.org/article/10.1149/1.1469032/meta

 

 

17) Kwang-Ho Kwon, Seung-Youl Kang, and Nam-Kwan Hong, “Etch Characteristics of Pt by using BCl3/Cl2 Gas Mixtures”, Journal of Materials Science: Materials in Electronics, 13 (2002) 187-191 https://link.springer.com/article/10.1023/A:1014872314719

 

 

18) Sung-Ku Kwon, Kwang-Ho Kwon, Byung-Whan Kim, Jong-Moon Park, Seong-Wook Yoo, Kun-Sik Park, Yoon-Kyu Bae, and Bo-Woo Kim, “Characterization of via etch in CHF3/CF4 magnetically enhanced reactive ion etching using neural networks” ETRI Journal, Vol. 24, No. 3, pp. 211-220, June 2002 https://doi.org/10.4218/etrij.02.0102.0305

 

Characterization of Via Etching in CHF3/CF4 Magnetically Enhanced Reactive Ion Etching Using Neural Networks

This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a CHF3/CF4 gas chemistry. We use a statistical 24‐1 experimental design plus one...

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19) Dong-Pyo Kim, Chang-Il Kim, and Kwang-Ho Kwon, “Etching Properties of ZnS thin films in Cl2/CF4/Ar plasma”, Thin Solid Films, 459 (2004) pp. 131136, Issues 1-2, 1 July, 2004 https://doi.org/10.1016/j.tsf.2003.12.128

 

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20) Sun Jin Yun, Kwang-Ho Kwon, Yong-Eui Lee, and Chang-Il Kim, “Etching Characteristics of Manganese-doped Zinc Sulfide Film by Using Cl2/CF4-Inductively Coupled Plasma”, Japanese Journal of Applied Physics, Vol. 43, no. 5A, 2004, pp. 2716-2720 https://iopscience.iop.org/article/10.1143/JJAP.43.2716/meta

 

Etching Characteristics of Manganese-Doped Zinc Sulfide Film Using Cl2/CF4 Inductively Coupled Plasma - IOPscience

The etching characteristics of manganese-doped zinc sulfide (ZnS:Mn) films were investigated using the inductively coupled plasma (ICP) of Cl2/CF4 gas mixture. The chemical surface reaction of ZnS:Mn etching with Cl2/CF4 ICP plasma was studied by plasma an

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21) Gwan-Ha Kim, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim, Chi-Sun Park and Kwang-Ho Kwon, “Study on the Etch Characteristics of BST Thin Films by Using Inductively Coupled Plasma”, Journal of the Korean Physical Society, Vol. 45, December 2004, pp. S724-S727 https://www.koreascience.or.kr/article/CFKO200425363156267.page

 

A study on the etch characteristics of BST thin films using inductively coupled plasma -Proceedings of the Korean Institute

Abstract In this study, BST thin films were etched with inductively coupled $CF_4/(Cl_2+Ar)$ plasmas. The etch characteristics of BST thin films as a function of $CF_4/(Cl_2+Ar)$ gas mixtures were analyzed using quadrupole mass spectrometry (QMS) and optic

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22) Jun-Kyu Yang, Hyung-Ho Park and Kwang-Ho Kwon “Band offset control of Gd2O3/n-GaAs (001) structure by incorporation of SiO2” Thin Solid Films, Volume 484, Issues 1-2, 22 July 2005, Pages 415-419 https://doi.org/10.1016/j.tsf.2005.02.005

 

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23) Nam-Ki Min, Mansu Kim and Kwang-Ho Kwon, Alexander Efremov, Hyun Woo Lee, and Sungihl Kim, “Etch Characteristics of Ge2Sb2Te5 (GST), SiO2 and a Photoresist in an Inductively Coupled Cl2/Ar Plasma”, Journal of the Korean Physical Society, Vol. 51, No. 5, November 2007, pp. 1686_1694 https://doi.org/10.3938/jkps.51.1686

 

 

24) Kwang-Ho Kwon, Nam-Ki Min, Seung-Youl Kang, Kyu-Ha Baek, Kyung Soo Suh, and Dmitriy Alexandrovich Shutov, “Kinetics of Chemical Changes in Phenol Formaldehyde Based Polymeric Films Etched in N2O and O2 Inductively Coupled Plasmas: A Comparative Study”, Japanese Journal of Applied Physics 48 (2009) https://doi.org/10.1143/JJAP.48.08HA02

 

Kinetics of Chemical Changes in Phenol Formaldehyde Based Polymeric Films Etched in N2O and O2 Inductively Coupled Plasmas: A Co

This paper reports on investigation of surface chemistry and etch rates of phenol formaldehyde based polymer after N2O and O2 radio frequency (RF) inductively coupled plasma processing depend on exposure time. By using X-ray photoelectron spectroscopy, it

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25) Byungwhan Kim, Sang Hee Kwon, Kwang-Ho Kwon, Kyu-Ha Baek, Jin Ho Lee, Dong Hwan Kim, and Gary S. May, “Statistical Characterization of Process-Induced Plasma Damage”, Materials and Manufacturing Processes, 24: 610614, 2009 https://doi.org/10.1080/10426910902768915

 

Statistical Characterization of Process-Induced Plasma Damage

(2009). Statistical Characterization of Process-Induced Plasma Damage. Materials and Manufacturing Processes: Vol. 24, No. 6, pp. 610-614.

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26) Nomin Lim, Il Ki Han, Young-Hwan Kim, Hyun Woo Lee, Yunsung Cho, Jeong-Su Kim, Yeon-Ho Im and Kwang-Ho Kwon, “Abnomal characteristics of etched profile on thick dielectrics for MEMS in inductively coupled plasma”, Vacuum, 166, 45-49 (2019) https://doi.org/10.1016/j.vacuum.2019.04.054

 

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