Byungjun Lee

•   Name : Byungjun Lee
•   Degree : Ph. D. Candidate
•   E-mail : byung_jun@korea.ac.kr
•   Research area :  Development of ion and neutral species control methodolog

Published.

1) Byung Jun Lee, Alexander Efremov, Junmyung Lee, and Kwang-Ho Kwon, “Etching kinetics and mechanisms of SiC thin films in F‑, Cl- and Br‑based plasma chemistries”, Plasma Chemistry and Plasma Processing, Vol.39, 325-338, (2019). https://doi.org/10.1007/s11090-018-9933-z

 

 

2) Byung Jun Lee, Alexander Efremov, Jihun Kim, Changmok Kim, and Kwang-Ho Kwon, “Peculiarities of Si and SiO2 Etching Kinetics in HBr + Cl2 + O2 Inductively Coupled Plasma”, Plasma Chemistry and Plasma Processing, Vol 39, 339-358, (2019) https://doi.org/10.1007/s11090-018-9943-x

 

 

3) Byung Jun Lee, Alexander Efremov, Jihun Kim, Changmok Kim, and Kwang-Ho Kwon, “Plasma parameters, gas-phase chemistry and Si/SiO2 etching mechanisms in HBr+Cl2+O2 gas mixture: Effect of HBr/O2 mixing ratio”, Vacuum, Vol 163, 110-118, (2019) https://doi.org/10.1016/j.vacuum.2019.02.014

Redirecting

4) Byung Jun Lee, Alexander Efremov, Yunho Nam, and Kwang-Ho Kwon, “Plasma Parameters and Silicon Etching Kinetics in C4F8+O2+Ar Gas Mixture: Effect of Component Mixing Ratios”, Plasma Chemistry and Plasma Processing. https://doi.org/10.1007/s11090-020-10097-9

 

 

5) Byung Jun Lee, Boung Jun Lee, Alexander Efremov, Ji-Woon Yang, and Kwang-Ho Kwon, “Etching Characteristics and Mechanisms of MoS2 2D Crystals in O2/Ar Inductively Coupled Plasma”, J. Nanosci. Nanotechnol. vol. 16, 11201-11209 (2016) https://doi.org/10.1166/jnn.2016.13478

Etching Characteristics and Mechanisms of MoS2 2D Crystals in O2/...: Ingenta Connect

6) Byung Jun Lee, Alexander Efremov, Yunho Nam and Kwang-Ho Kwon “On the Control of Plasma Chemistry and Silicon Etching Kinetics in Ternary HBr+Cl2+O2 Gas System: Effects of HBr/O2 and Cl2/O2 mixing ratios”, Science of Advanced Materials,Vol. 12. pp. 628-640, 2020 https://doi.org/10.1166/sam.2020.3676