1) Kum-Pyo Yoo, Kwang-Ho Kwon, Nam-Ki Min, Myong Jin Lee, and Cheol Jin Lee, “Effects of O2 plasma treatment on NH3 sensing characteristics of multiwall carbon nanotube/polyaniline composite films”, Sensors and Actuators B 143 (2009) 333–340 https://doi.org/10.1016/j.snb.2009.09.029
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2) Jaemin Lee, Alexander Efremov, Ryeo Gang Son, Seung Pil Pack, Hyun Woo Lee, Kwangsoo Kim and Kwang-Ho Kwon, “Ammonia-based plasma treatment of single-walled carbon nanotube thin films for bio-immobilization”, Carbon, 105, p430-437 (2016) https://doi.org/10.1016/j.carbon.2016.04.061
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3) Jaemin Lee, Alexander Efremov, Junmyung Lee, Kwangsoo Kim, and Kwang-Ho Kwon, “Etching Characteristics of Carbon Nanotube Thin Films in O2/Ar Plasma”, J. Nanosci. Nanotechnol. 16,12021-12027 (2016) https://doi.org/10.1166/jnn.2016.13637
Etching Characteristics of Carbon Nanotube Thin Films in O2/Ar Pl...: Ingenta Connect
In this work, we studied the influence of O2/Ar mixing ratio on the etching characteristics of carbon nanotube (CNT) thin films in inductively coupled plasma at constant gas pressure (6 mTorr), input power (400 W), bias power (50 W), and total gas flow rat
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4) Byung Jun Lee, Boung Jun Lee, Alexander Efremov, Ji-Woon Yang, and Kwang-Ho Kwon, “Etching Characteristics and Mechanisms of MoS2 2D Crystals in O2/Ar Inductively Coupled Plasma”, J. Nanosci. Nanotechnol. vol. 16, 11201-11209 (2016) https://doi.org/10.1166/jnn.2016.13478
Etching Characteristics and Mechanisms of MoS2 2D Crystals in O2/...: Ingenta Connect
Etching characteristics and mechanism of MoS2 in O2/Ar inductively coupled plasma were investigated by both experimental and modeling methods. It was found the under the given set of experimental conditions the MoS2 etching process appears in the layer-by
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5) Yong Geun Kim, Jummyung Lee, Hyun Woo Lee, and Kwang-Ho Kwon, “Etching Chracteristics of Graphene Film for Electronic Devices Using Inductively Coupled Plasma”, J. Nanosci. Nanotechnol. 16,11986-11991 (2016) https://doi.org/10.1166/jnn.2016.13630
Etching Characteristics of Graphene Film for Electronic Devices U...: Ingenta Connect
In this work, we studied the etching characteristics of graphene film in O2/Ar inductively coupled plasmas. We determined the relationship between the plasma state and the change in the graphene surface to understand the etch mechanism. The resistance of t
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