1) Y.-H. Ham, Youngkeun Kim, K.-H. Baek, L. M. Do, K.-H. Kwon, and Kang-Bak Park, “Analysis of Etching Mechanism and Etched Slope Control of Silicon for Nanoimprinting Lithography”, Journal of Nanoscience and Nanotechnology, Vol. 11, 6523-6527, 2011, https://doi.org/10.1166/jnn.2011.4357
Analysis of Etching Mechanism and Etched Slope Control of Silicon...: Ingenta Connect
In the nanoimprint lithography (NIL) process, profile control of imprint masters is a very important task. Therefore, we attempted to control the etched slope of imprint masters as a function of adding O2 to CF4 plasma. Etched profile mechanisms and relati
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2) Youngkeun Kim, Sungchil Kang, Young-Hyun Ham, and Kwang-Ho Kwon, Dimitriy Alexandrovich Shutov, Hyun-Woo Lee, Jae Jong Lee, Lee-Mi Do, and Kyu-Ha Baek, “Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithography”, J. Vac. Sci. Technol. A 30(3), 03160-1 https://doi.org/10.1116/1.3695995
Study on surface modification of silicon using CHF3/O2 plasma for nano-imprint lithographya)
In this article, we report the surface modification of silicon by an inductively coupled CHF3/O2 plasma treatment for demolding process in nano-imprint lithography. The effects of O2 addition to th...
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3) Jaemin Lee, Junmyung Lee, Hyun Woo Lee, and Kwang-Ho Kwon, “Anti-adhesive characteristics of CHF3/O2 and C4F8/O2 plasma-modified silicon molds for nanoimprint lithography”, Materials Research Bulletin 69 (2015) 120-125. https://doi.org/10.1016/j.materresbull.2014.12.023
Redirecting
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4) Junmyung Lee, Alexander Efremov, Jaemin Lee, Geun Young Yeom, and Kwang-Ho Kwon, “Silicon Surface Modification Using C4F8 + O2 Plasma for nano-Implant Lithography”, J. Nanosci. Nanotechnol. 15, 8749-8755, (2015) https://doi.org/10.1166/jnn.2015.11511
Silicon Surface Modification Using C4F8+O2 Plasma for Nano-Imprin...: Ingenta Connect
The investigation of C4F8+O2 feed gas composition on both plasma parameters and plasma treated silicon surface characteristics was carried out. The combination of plasma diagnostics by Langmuir probes and plasma modeling indicated that an increase in O2 mi
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