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1) Byungwhan Kim and Kwang-Ho Kwon, “Modeling Magnetically Enhanced RIE of Aluminum Alloy Films Using Neural Networks”, IEEE Transaction on Semiconductor Manufacturing, Vol. 11. No. 4. pp.692-695. Nov, 1998 https://doi.org/10.1109/66.728566

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2) Seung-Youl Kang, Sang-Kyun Lee, Hyung Jong Lee, Kwang-Ho Kwon, Bok-Gil Choi, Yoon-Ho Song, Jin-Ho Lee, and Kyung Ik Cho, “Fluorine Incorporation Effects in Cl2 Plasma Etching of Silicon: Quadrupole Mass Spectrometer Analysis”, Journal of The Electrochemical Society, 146(12) pp. 4626-4629 (1999) https://iopscience.iop.org/article/10.1149/1.1392684/meta

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3) Jong-Sik Kim, Gon-Ho Kim, Tae-Hun Chung, Geun-Young Yeom, and Kwang-Ho Kwon, “Characterization of an Oxygen Plasma by Using a Langmuir Probe in an Inductively Coupled Plasma”, Journal of the Korean Physical Society, Vol. 38, No. 3, March 2001, pp. 259 – 263 https://link.springer.com/journal/40042/volumes-and-issues

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4) Byungwhan Kim, Kwang-Ho Kwon, and Seung-Youl Kang, “Modeling Electron Cyclotron Resonance Etching of Ba(Mg1/3Ta2/3)O3 film Using Neural Networks” Surface & Coatings Technology, 161/2-3, pp. 174-178, Dec, 2002 https://doi.org/10.1016/S0257-8972(02)00513-3

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5) Byungwhan Kim, Kwang-Ho Kwon, Sung-Ku Kwon, Jong-Moon Park, Seong Wook Yoo, Kun-Sik Park, and Bo-Woo Kim, “Modeling oxide etching in a magnetically enhanced reactive ion plasma using neural networks”, J. Vac. Sci, Technol. B20(5), pp. 2113 – 2119, 2002. https://doi.org/10.1116/1.1511212

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6) Byungwhan Kim, Kwang-Ho Kwon, Sung-Ku Kwon, Jong-Moon Park, Seong Wook Yoo, Kun-Sik Park, In-Kyu You, and Bo-Woo Kim, "Modeling a via profile etched in a CHF3/CF4 plasma using neural networks" Journal of Korean Physical Society, vol. 41, No. 4, pp.433-438, 2002 https://www.researchgate.net/profile/Sung_Ku_Kwon2/publication/264288917_Modeling_a_Via_Profile_Etching_in_a_CHF3CF4_Plasma_Using_a_Neural_Network/links/53d7a0730cf2a19eee7fc766/Modeling-a-Via-Profile-Etching-in-a-CHF3-CF4-Plasma-Using-a-Neural-Network.pdf

 

 

7) Byungwhan Kim , Kwang-Ho Kwon, Sung-Ku Kwon, Jong-Moon Park , Seong Wook Yooc,

Kun-Sik Park, In-Kyu You, Bo-Woo Kim, “Modeling etch rate and uniformity of oxide via etching in a CHF3/CF4 plasma using neural networks “Thin Solid Films 426 (2003) 8–15 https://doi.org/10.1016/S0040-6090(02)01114-8

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8) Byungwhan Kim and Kwang-Ho Kwon, “Qualitative modeling silica plasma etching using neural network”, Journal of Applied Physics, Vol. 93, No. 1, pp. 76 – 82, 2003 https://doi.org/10.1063/1.1527216

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9) K.-H. Kwon, A. M. Efremov, G.-Y. Yeom and Y. I. Kang, “The etching mechanism of (Zr0.8Sn0.2)TiO4 (ZST) film by using Cl2/O2-gas plasma”, Journal of Korean Physical Society, vol. 42, February, 2003, pp.S809 – S813 https://pnpl.skku.edu/_res/pnpl/etc/2003-05.pdf

 

 

10) Byungwhan Kim, Duk Woo Lee, and Kwang-Ho Kwon “Prediction of etch microtrenching using a neural network”, Journal of Applied Physics, Vol. 96, No. 7, pp. 3612-3616, 2004 https://doi.org/10.1063/1.1789276

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11) A. Efremov, K.-H. Kwon, C.-S. Park, S.-I. Choi, C. I. Kim, and S.-H. Chai’ “Plasma parameters and volume kinetics in Cl2/O2 mixtures”, Journal of Materials Science: materials in Electronics, Vol. 16, No. 6, pp. 315 – 321, June 2005 https://link.springer.com/article/10.1007/s10854-005-1141-y

 

 

12) Alexander Efremov, Bok-Gil Choi, Sahn Nahm, Nam-Ki Min, and Kwang-Ho Kwon “Plasma parameters and Active Species Kinetics in an Inductively Coupled HBr Plasma”, Journal of the Korean Physical Society, Vol. 52, No. 1, January 2008, pp. 48_55 https://koreauniv.pure.elsevier.com/en/publications/plasma-parameters-and-active-species-kinetics-in-an-inductively-c

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13) Mansu Kim, Nam-Ki Min, Sun Jin Yun, Hyun Woo Lee, Alexander Efremov, and Kwang-Ho Kwon, “On the etching mechanism of ZrO2 thin films in inductively coupled BCl3/Ar plasma”, Microelectronic Engineering 85 (2008) 348 – 354 (Feb) https://doi.org/10.1016/j.mee.2007.07.009

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14) Nam-Ki Min, Alexander Efremov, Yun-Ho Kim, Mansu Kim, Hyung-Ho Park, Hyun Woo Lee, and Kwang-Ho Kwon, “Etching Characteristics and Mechanism of Ge2Sb2Te9 thin films in inductively coupled Cl2/Ar plasma”, J. Vac. Sci. Technol. A 26(2), Mar/Apr 2008, pp. 205 – 211 https://doi.org/10.1116/1.2831502

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15) Mansu Kim, Nam-Ki Min, Sun Jin Yun, Hyun Woo Lee, Alexander Efremov, and Kwang-Ho Kwon, “Effect of Gas Mixing Ratio on Etch Behavior of ZrO2 Thin Films in BCl3/He Inductively Coupled Plasma”, J. Vac. Sci. Technol. A 26(3), May/June 2008, pp. 344 – 351 https://doi.org/10.1116/1.2891255

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16) Alexander Efremov, Mansu Kim, Nam-Ki Min, and Kwang-Ho Kwon, “On the Etch Mechanism of Ba2Ti9O20 Dielectric Thin Film in Inductively Coupled Cl2/Ar Plasma” Journal of The Electrochemical Society, 155(6) D468-473 (2008) (June) https://iopscience.iop.org/article/10.1149/1.2899005/meta

 

 

17) Mansu Kim, Nam-Ki Min, Sun Jin Yun, Hyun Woo Lee, Alexander M. Efremov, and Kwang-Ho Kwon, “Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas”, ETRI Journal, Vol 30, No. 3, June 2008, pp. 383 – 393 (June) https://doi.org/10.4218/etrij.08.0107.0206

 

 

18) Sun Jin Yun, Alexander Efremov, Mansu Kim, Dae-Won Kim, Jung Wook Lim, Yong-Hae Kim, Choong-Heui Chung, Dong Jin Park, and Kwang-Ho Kwon, “Etching Characteristics of Al2O3 thin films in inductively coupled BCl3/Ar plasma”, Vacuum 82 (2008) 1198 – 1202. https://doi.org/10.1016/j.vacuum.2007.12.018

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19) Alexander Efremov, Nam-Ki Min, Sungihl Kim, Mansu Kim, Sahn Nahm, and Kwang-Ho Kwon, “Effect of gas mixing ratio on etch behaviors of Ba2Ti9O20 (BTO) and Pt thin films in Cl2/Ar inductively coupled plasma”, Microelectronic Engineering 85 (2008) 1584 – 1589 (July) https://doi.org/10.1016/j.mee.2008.03.003

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20) Mansu Kim, Nam-Ki Min, Alexander Efremov, Hyun Woo Lee, Chi-Sun Park, and Kwang-Ho Kwon, Model-based analysis of the silica glass film etch mechanism in CF4/O2 inductively coupled plasma, J. Mater. Sci: Mater Electron, vol 19 (2008) pp. 957 – 964 (Oct) https://doi.org/10.1007/s10854-007-9425-z

 

 

21) Hyun Woo Lee, Mansu Kim, Nam-Ki Min, Alexander Efremov, Chi-Woo Lee, and Kwang-Ho Kwon, “Etching Characteristics and Mechanism of InP in Inductively Coupled Plasma HBr/Ar Plasma”, Japanese Journal of Applied Physics, Vol. 47, No. 8, 2008, pp. 6917 – 6922. https://doi.org/10.1143/JJAP.47.6917

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23) Alexander Efremov, Nam-Ki Min, Sun Jin Yun, and Kwang-Ho Kwon, “Effect of gas mixing ratio on etch behavior of ZrO2 thin films in Cl2-based inductively coupled plasmas”, J. Vac. Sci. Technol. A 26(6), Nov/Dec 2008, pp. 1480 – 1486. https://doi.org/10.1116/1.2998806

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24) Alexander Efremov, Nam-Ki Min, Bok-Gil Choi, Kyu-Ha Baek, and Kwang-Ho Kwon, “Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl2/X (X = Ar, He, N2) Inductively Coupled Plasma”, Journal of The Electrochemical Society, 155 (12) D777-D782 (2008) https://doi.org/10.1149/1.2993160

 

 

25) Yong-Hyun Ham, Alexander Efremov, Sun Jin Yun, Jun Kwan Kim, Nam-Ki Min, Kwang-Ho Kwon, “Etching characteristics and mechanism of ZnO thin films in inductively coupled HBr/Ar plasma”, Thin Solid Films, Vol. 517, Issue 14, Pages 4242-4245 https://doi.org/10.1016/j.tsf.2009.02.008

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26) Taehoon Lee, Alexander Efremov, Yong-Hyun Ham, Sun Jin Yun, Nam-Ki Min, MunPyo Hong, and Kwang-Ho Kwon, “Etching characteristics and mechanism of vanadium dioxide in inductively coupled Cl2/Ar plasma”, J. Micro/Nanolith. MEMS MOEMS 8, 021110 (2009) https://doi.org/10.1117/1.3100423

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27) Byungwhan Kim, Sang Hee Kwon, Kwang-Ho Kwon, Sangwoo Kang, Kyu-Ha Baek, and Jin Ho Lee, “Neural network characterization of plasma-induced charging damage on thick oxide-based metal-oxide-semiconductor device” JOURNAL OF APPLIED PHYSICS 105, 113302-1 https://doi.org/10.1063/1.3122602

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28) Yong-Hyun Ham, Alexander Efremov, Nam-Ki Min, Hyun Woo Lee, Sun Jin Yun, and Kwang-Ho Kwon, “Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar plasma”, Japanese Journal of Applied Physics 48 (2009) 08HD04 https://doi.org/10.1143/JJAP.48.08HD04

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29) D. A. Shutov, Seung-Youl KANG, Kyu-Ha BAEK, Kyung-Soo SUH, and Kwang-Ho KWON, “Inductively-Coupled Nitrous-Oxide Plasma Etching of Parylene-C Films”, Journal of the Korean Physical Society, Vol. 55, No. 5, November 2009, pp. 1836 – 1840 https://doi.org/10.3938/jkps.55.1836

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30) Kwang-Ho Kwon, Alexander Efremov, Yong-Hyun Ham, Nam Ki Min, Hyun Woo Lee, MunPyo Hong, and Kwangsoo Kim, “Etching characteristics and mechanism of indium tin oxide films in an inductively coupled HBr/Ar Plasma”, J. Vac. Sci. Technol. A 28 (1), 2010 11–15 https://doi.org/10.1116/1.3256226

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31) Kwang-Ho Kwon, Alexander Efremov, Moonkeun Kim, Nam Ki Min, MunPyo Hong, and Kwangsoo Kim, “Etch Mechanism of In2O3 and SnO2 Thin Films in HBr-based Inductively Coupled Plasmas”, JVST A 28(2) 2010 226-231 https://doi.org/10.1116/1.3294712

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32) Kwang-Ho Kwon, Alexander Efremov, Moonkeun Kim, Nam Ki Min, Jaehwa Jeong, and Kwangsoo Kim, “Etching Characteristics of In2O3 and SnO2 Thin Films in an Inductively Coupled HBr/Ar Plasma: Effects of Gas Mixing Ratio and Bias Power” Japanese Journal of Applied Physics 49 (2010) 031103-1 https://doi.org/10.1143/JJAP.49.031103

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34) Alexander Efremov, Nam Ki Min, Jaehwa Jeong, Youngkeun Kim and Kwang-Ho Kwon, “Etching characteristics of Pb(Zr,Ti)O3, Pt, SiO2 and Si3N4 in an inductively coupled HBr/Ar plasma”, Plasma Sources Sci. Technol. Vol. 19, No. 4, August 2010, 045020 https://doi.org/10.1088/0963-0252/19/4/045020

 

 

35) Yong-Hyun Ham, Alexander Efremov, Hyun-Woo Lee, Sun Jin Yun, Nam Ki Min, Kwangsoo Kim, and Kwang-Ho Kwon, “Etching characteristics and mechanism of ZnO and Ga-doped ZnO thin films in inductively coupled HBr/Ar/CHF3 plasma”, Japanese Journal of Applied Physics 49 (2010) 08JB03 http://doi.org/10.1143/JJAP.49.08JB03

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36) Moonkeun Kim, Alexander Efremov, Hyun Woo Lee, Nam Ki Min, Hyung-Ho Park, Kyu-Ha Baek, and Kwang-Ho Kwon, “Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas” Japanese Journal of Applied Physics 49 (2010) 08JB04-1 http://doi.org/10.1143/JJAP.49.08JB04

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37) Kwang-Ho Kwon, Youngkeun Kim, Alexander Efremov, and Kwangsoo Kim, “On the Dry Etch Mechanisms of Y2O3, SiO2, and Si3N4 in a Cl2/BCl3 Inductively Coupled Plasma”, Journal of the Korean Physical Society, Vol. 58, No. 3, March 2011, pp. 467 – 471. https://inis.iaea.org/search/search.aspx?orig_q=RN:43053705

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38) Alexander Efremov, Youngkeun Kim, Hyun-Woo Lee, and Kwang-Ho Kwon “A Comparative Study of HBr-Ar and HBr-Cl2 Plasma Chemistries for Dry Etch Applications” Plasma Chemistry and Plasma Processing, (2011) 31:259-271 https://doi.org/10.1007/s11090-010-9279-7

 

 

39) Yong-Hyun Ham, Alexander Efremov, Hyun Woo Lee, Sun Jin Yun, Nam Ki Min, Kyu-Ha Baek, Lee-Mi Do, and Kwang-Ho Kwon, “Etching Characteristics and Mechanism of Ga-dopped ZnO Thin Films in Inductively-Coupled HBr/X (X = Ar, He, N2, O2) Plasmas”, Vacuum 85 (2011), pp. 1021-1025 https://doi.org/10.1016/j.vacuum.2011.03.009

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40) Kwang-Ho Kwon, Alexander Efremov, Youngkeun Kim, Chi-Woo Lee, and Kwangsoo Kim, “Etching Characteristics and Mechanisms of Pb(Zr,Ti)O3, Pt, and SiO2 in an Inductively Coupled HBr/Cl2 Plasma”, Jpn. J. Appl. Phys. 50 (2011) 066502-1. https://doi.org/10.1143/JJAP.50.066502

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41) Moonkeun Kim, Alexander Efremov, Hyun Woo Lee, Hyung-Ho Park, Nam Ki Min, and Kwang-Ho Kwon, “HfO2 Etching Mechanism in Inductively-Coupled Cl2/Ar Plasma”, Thin Solid Films 519 (2011) 6708–6711. https://doi.org/10.1016/j.tsf.2011.04.059

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42) Alexander Efremov, Sungchil Kang, Kwang-Ho Kwon, and Won Seok Choi, “Etching characteristics and mechanisms of SiC thin films in inductively-coupled HBr-Ar, N2, O2 plasmas”, J. Vac. Sci. Technol. A 29(6), 06B103-1 – 6, Nov/Dec 2011. https://doi.org/10.1116/1.3655561

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43) Hanbyeol Jang, Alexander Efremov, Daehee Kim, Sungchil Kang, Sun Jin Yun, Kwang-Ho Kwon, Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas, Plasma Chemistry and Plasma Processing, (2012) 32:333-342. https://doi.org/10.1007/s11090-016-9737-y

 

 

44) Kwang-Ho Kwon, A. Efremov, Sungchil Kang, Hanbyeol Jang, and Kwangsoo Kim, “Etching Behavior and Mechanism of In, Ga-dopped ZnO Thin Films in Inductively-Coupled BCl3/Cl2/Ar Plasmas”, Jpn. J. Appl. Phys. 51 (2012) 076201-1 https://doi.org/10.1143/JJAP.51.076201

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45) Moonkeun Kim, Hanbyeol Jang, Yong-Hwa Lee, Kwang-Ho Kwon, and Kang-Bak Park, “Modeling of an Inductively Coupled Cl2/Ar Plasma Using Neural Network”, Thin solid films 521 (2012) 38– 41 https://doi.org/10.1016/j.tsf.2012.03.076

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46) Daehee Kim, Alexander Efremov, Hanbyeol Jang, Sungchil Kang, Sun Jin Yun, Kwang-Ho Kwon, “Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl2/Ar Inductively Coupled Plasma”, Jpn. J. Appl. Phys. Vol. 51, no. 10, 106201-1-5 https://doi.org/10.1143/JJAP.51.106201

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47) Moonkeun Kim, Hanbyeol Jang, Yong-Hwa Lee, Kwang-Ho Kwon, and Kang-Bak Park, “Modeling of electron temperature and DC bias voltage in an inductively-coupled Cl2/Ar plasma using neural network”, Surface & Coatings Technology 231 (2013) 546–549 https://doi.org/10.1016/j.surfcoat.2012.07.040

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48) Sungchil Kang, Alexander Efremov, Sun Jin Yun, Jinyoung Son, and Kwang-Ho Kwon, “Etching Characteristics and Mechanisms of Mo and Al2O3 Thin Films in O2/Cl2/Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios”, Plasma Chemistry and Plasma Processing, vol. 33, Issue 2(2013), pp. 527 – 538 https://doi.org/10.1007/s11090-013-9435-y

 

 

49) Sungchil Kang, Seong-Kyun Jeong, Kwang-Ho Kwon, and Kang-Bak Park, “Neural Network Modeling of Deposition Rate Characteristics of Low Temperature Silicon Nitride Deposited by Inner Two Parallel Coil Inductively Coupled Plasma Chemical Vapor Deposition”, J. Nanosci. Nanotechnol. Vol. 13, 8101-8105, 2013 https://doi.org/10.1166/jnn.2013.8171

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50) Jinyoung Son, Alexander Efremov, Inwoo Chun, Geun Young Yeom, and Kwang-Ho Kwon, “On the LPCVD-formed SiO2 Etching Mechanism in CF4/Ar/O2 Inductively Coupled Plasmas: Effects of Gas Mixing Ratios and Gas”, Plasma Chemistry and Plasma Processing, (2014), 34:239-257 https://doi.org/10.1007/s11090-013-9513-1

 

 

51) Kwang-Ho Kwon, Alexander Efremov, Sun Jin Yun, Inwoo Chun, and Kwangsoo Kim, “Dry etching characteristics of Mo and Al2O3 films in O2/Cl2/Ar inductively coupled plasmas”, Thin Solid Films, 552 (2014) 105 – 110 https://doi.org/10.1016/j.tsf.2013.12.013

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52) Nomin Lim, Alexander Efremov, Geun Young Yeom, and Kwang-Ho Kwon “On the Etching Characteristics and Mechanisms of HfO2 Thin Films in CF4/O2/Ar and CHF3/O2/Ar Plasma for nano-device”, J. Nanosci. Nanotechnol. 14, 9670-9679 (2014) https://doi.org/10.1166/jnn.2014.10171

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53) Jinyoung Son, Alexander Efremov, Sun Jin Yun, Geun Young Yeom, and Kwang-Ho Kwon “Etching Characteritics and Mechanism of SiNx Films for Nano-devices in CH2F2/O2/Ar Inductively Coupled Plasma: Effect of O2 Mixing Ratio”, J. Nanosci. Nanotechnol. 14, 9368-9372 (2014) https://doi.org/10.1166/jnn.2014.10182

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54) Nomin Lim, Alexander Efremov, Geun Young Yeom, Bok-Gil Choi, and Kwang-Ho Kwon “Etching characteristics and mechanisms of Mo thin films in Cl2/Ar and CF4/Ar inductively coupled plasmas”, Japanese Journal of Applied Physics, 53, 116201(2014) https://doi.org/10.7567/JJAP.53.116201

 

 

55) Inwoo Chun, Alexander Efremov, Geun Young Yeom, and Kwang-Ho Kwon “A Comparative Study of CF4/O2/Ar and C4F8/O2/Ar Plasmas for Dry Etching Applications” Thin Solid Films, 579 (2015) 136-143 https://doi.org/10.1016/j.tsf.2015.02.060

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56) Kwangsoo Kim, Alexander Efremov, Junmyung Lee, Geun Young Yeom, and Kwang-Ho Kwon “Etching Mechanisms of (In, Ga, Zn)O Thin Films in CF4/Ar/O2 Inductively Coupled Plasma”, JVST A, 2015 https://doi.org/10.1116/1.4913735

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57) Junmyung Lee, Alexander Efremov, Geun Young Yeom, Nomin Lim and Kwang-Ho Kwon, “Application of Si and SiO2 Etching Mechanisms in CF4/C4F8/Ar Inductively Coupled Plasmas for Nanoscale Patterns”, J. Nanosci. Nanotechnol. 15, 8340-8347, (2015) https://doi.org/10.1166/jnn.2015.11256

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58) Alexander Efremov, Joon Hyub, and Kwang-Ho Kwon, “A Model-Based Comparative Study of HCl and HBr Plasma Chemistries for Dry Etching Purposes”, Plasma chemistry and plasma processing, 35(6), p1129-1142 (2015) https://doi.org/10.1007/s11090-015-9639-4

 

 

59) Junmyung Lee, Alexander Efremov, Byung Jun Lee, and Kwang-Ho Kwon, “Etching Characteristics and Mechanisms of TiO2 Thin Films in CF4 + Ar, Cl2 + Ar and HBr + Ar Inductively Coupled Plasmas”, Plasma chemistry and plasma processing , 36, p1571-1588 (2016) https://doi.org/10.1007/s11090-016-9737-y

 

 

60) Jongchan Lee, Alexander Efremov, Kwangsoo Kim and Kwang-Ho Kwon, “Etching characteristics of SiC, SiO2, and Si in CF4/CH2F2/N2/Ar inductively coupled plasma: Effect of CF4/CH2F2 mixing ratio”, Japanese Journal of Applied Physics 55, 106201 (2016) https://iopscience.iop.org/article/10.7567/JJAP.55.106201/pdf

 

 

61) Alexander Efremov, Junmyung Lee and Kwang-Ho Kwon, “A comparative study of CF4, Cl2 and HBr +Ar Inductively coupled plasmas for dry etching applications”, Thin Solid Films, vol.629, 39-48 (2017) https://doi.org/10.1016/j.tsf.2017.03.035

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62) Jongchan Lee, Alexander Efremov, Kwangsoo Kim, and Kwang-Ho Kwon, “On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N2/Ar Inductively Coupled Plasma” Plasma Chem. Plasma Process, Vol. 37(2), 489-509 (2017) https://doi.org/10.1007/s11090-016-9781-7

 

 

63) Jaemin Lee, Alexander Efremov and Kwang-Ho Kwon, “On the relationships between plasma chemistry, etching kinetics and etching residues in CF4+C4F8+Ar and CF4+CH2F2+Ar plasmas with various CF4/C4F8 and CF4/CH2F2 mixing ratios”, Vacuum, 214-223, (2018) https://doi.org/10.1016/j.vacuum.2017.11.029

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64) Changmok Kim, Alexander Efremov, Jaemin Lee, Il Ki Han, Young-Hwan Kim, and Kwang-Ho Kwon, “Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl2 + Ar inductively coupled plasma with various HBr/Cl2 mixing ratios”, Thin Solid Films, Vol.660, 590-595, (2018). https://doi.org/10.1016/j.tsf.2018.05.018

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65) Byung Jun Lee, Alexander Efremov, Junmyung Lee, and Kwang-Ho Kwon, “Etching kinetics and mechanisms of SiC thin films in F-, Cl- and Br-based plasma chemistries”, Plasma Chemistry and Plasma Processing, Vol.39, 325-338, (2019). https://doi.org/10.1007/s11090-018-9933-z

 

 

66) Byung Jun Lee, Alexander Efremov, Jihun Kim, Changmok Kim, and Kwang-Ho Kwon, “Peculiarities of Si and SiO2 Etching Kinetics in HBr + Cl2 + O2 Inductively Coupled Plasma”, Plasma Chemistry and Plasma Processing, Vol 39, 339-358, (2019) https://doi.org/10.1007/s11090-018-9943-x

 

 

67) Byung Jun Lee, Alexander Efremov, Jihun Kim, Changmok Kim, and Kwang-Ho Kwon, “Plasma parameters, gas-phase chemistry and Si/SiO2 etching mechanisms in HBr+Cl2+O2 gas mixture: Effect of HBr/O2 mixing ratio”, Vacuum, Vol 163, 110-118, (2019) https://doi.org/10.1016/j.vacuum.2019.02.014

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68) Nomin Lim, Alexander Efremov, and Kwang-Ho Kwon, “Gas-phase chemistry and etching mechanism of SiNx thin films in C4F8+Ar inductively coupled plasma”, Thin Solid Films, Vol. 685, 97-107, (2019) https://doi.org/10.1016/j.tsf.2019.05.066

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69) Junmyung Lee, Jihun Kim, Changmok Kim, Alexander Efremov, Hyun Woo Lee and Kwang-Ho Kwon, “Etching Kinetics and Surface Conditions for SiOxNy Thin Films in CF4+CHF3+O2 Inductively Coupled Plasma”, Plasma Chemistry and Plasma Processing, Vol.39 (4) 1127-1144, (2019) https://doi.org/10.1007/s11090-019-09973-w

 

 

70) Nomin Lim, Alexander Efremov, Hyun-Gyu Hwang, Sahn Nahm and Kwang-Ho Kwon, “Etching Kinetics and Surface Conditions for KNbxOy Thin Films with Fluorine- and Chlorine-Based Plasma Chemistries”, Plasma Chemistry and Plasma Processing, 40, 625-640 (2020) https://doi.org/10.1007/s11090-020-10064-4

 

 

71) Byung Jun Lee, Alexander Efremov, Yunho Nam, and Kwang-Ho Kwon, “Plasma Parameters and Silicon Etching Kinetics in C4F8+O2+Ar Gas Mixture: Effect of Component Mixing Ratios”, Plasma Chemistry and Plasma Processing. https://doi.org/10.1007/s11090-020-10097-9

 

 

72) Byung Jun Lee, Alexander Efremov, Yunho Nam and Kwang-Ho Kwon “On the Control of Plasma Chemistry and Silicon Etching Kinetics in Ternary HBr+Cl2+O2 Gas System: Effects of HBr/O2 and Cl2/O2 mixing ratios”, Science of Advanced Materials,Vol. 12. pp. 628-640, 2020 https://doi.org/10.1166/sam.2020.3676

On the Control of Plasma Chemistry and Silicon Etching Kinetics i...: Ingenta Connect