1) Sun Jin Yun, Kwang-Ho Kwon, Byung-Sun Park, Young-Jin Jeon, and Sang-Won Kang, "The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE", Microelectronic Engineering, Vol. 13, 115(1991) https://doi.org/10.1016/0167-9317(91)90060-Q
2) Hyung-Ho Park, Kwang-Ho Kwon, Sang-Hwan Lee, Sahn Nahm, Hee-Tae Lee, Kyoung-Ik Cho, Oh-Joon Kwon, and Young Il Kang, "A Study on Modified Silicon Surface after CHF3/C2F6 Reactive Ion Etching", ETRI journal, vol. 16, No. 1, p45-57, (1994) https://doi.org/10.4218/etrij.94.0194.0014
3) Kwang-Ho Kwon, Hyung-Ho Park, Kyung-Soo Kim, Chang-Il Kim, and Yung-Kwon Sung, "Recovery of silicon surface after reactive ion etching of SiO2 using CHF3/C2F6 plasma", Japanese J. Appl. Phys, vol. 35, part 1, no. 3, 1611 – 1616, (1996) https://iopscience.iop.org/article/10.1143/JJAP.35.1611/meta
4) Il-Sup Jin, Hyung-Ho Park, Kwang-Ho Kwon, and Chang-Il Kim, " Passivation role of sulfur and etching behavior in plasma etched TiW using SF6 and BCl3 gases", Microelectronic Engineering, 33, pp. 223-229 (1997) https://doi.org/10.1016/S0167-9317(96)00049-4
5) Kwang-Ho Kwon, Chang-Il Kim, Sun Jin Yun, Guen-Yong Yeom, "Etching Properties of Pt Thin Films by inductively coupled Plasma", Journal of Vacuum Science & Technology A. vol. 16, no. 5, pp. 2772 – 2776, (1998) https://doi.org/10.1116/1.581420
6) Kyu-Ha Baek, Kwang-Ho Kwon, Sun Jin Yun, Chang-il Kim, Jong-Moon Park, Yong-Sun Yoon, and Kee -Soo Nam, “ The role of Sulfur during Mo Etching Using SF6 and Cl2 gas chemistries”, Journal of Materials Science Letters, vol 17, pp. 1483 – 1486, Sept. 1998 https://link.springer.com/article/10.1023/A:1026434619677
7) Kwang-Ho Kwon, Seung-Youl Kang, Sang-Ho Park, Hee-Kyung Sung, Dong-Keun Kim, and Jong-Ha Moon, “Additive Oxygen Effects in Cl2 Plasma Etching of Chrome films”, Journal of Materials Science Letters, vol 18, pp. 1197-1200, Aug. 1, 1999 https://doi.org/10.1023/A:1006642016630
8) Byungwhan Kim, Kwang-Ho Kwon, and Sang-Ho Park, “Characterization of Metal-Masked Silica Etch Process in a CHF3/CF4 Inductively Coupled Plasma”, The Journal of Vacuum Science and Technology A 17(5), Sep/Oct (1999), pp. 2593 – 2597. https://doi.org/10.1116/1.581917
9) Nam-Hoon Kim, Chang-Il Kim, Eui-Goo Chang, and Kwang-Ho Kwon, “A Study on the Suppression of Etch Residues by O2 Gas Addition in Dry Etching of Pt Film”, Journal of Korean Physical Society, vol. 35, December 1999, pp. S806 – S809 https://link.springer.com/journal/40042/volumes-and-issues
10) J, Y, Park, H. S. Kim, D. H. Lee, K.-H. Kwon, G. Y. Yeom, ”A study on the etch characteristics of ITO thin film using inductively coupled plasmas”, Surface and Coating Technology, vol. 131, no. 1-3, Sept 2000, pp. 247-251 https://doi.org/10.1016/S0257-8972(00)00788-X
11) Kwang-Ho Kwon, Seung-Youl Kang, Geun-Young Yeom, Nam-Kwan Hong, and Jin Ho Lee, “Etch Characteristics of Pt by using Cl2/Ar/O2 Gas Mixtures”, Journal of The Electrochemical Society, 147(5) pp. 1807-1809 (2000) https://iopscience.iop.org/article/10.1149/1.1393438/meta
12) Jung-Woo Seo, Do-Haing Lee, Won-Jae Lee, Byung-Gon Yu, Kwang-Ho Kwon, Geun-Young Yeom, Eui-Goo Chang and Chang-Il Kim, “Etching Characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma”, J. Vac. Sci, Technol. A 18(4), pp. 1354-1358, Jul/Aug 2000 https://doi.org/10.1116/1.582353
13) Seung-Youl Kang, Kwang-Ho Kwon, Sang-Kyun Lee, Moon-Youn Jung, Young-Rae Cho, Yoon-Ho Song, Jin Ho Lee, and Kyoung-Ik Cho, “Etch Characteristics of Cr by using Cl2/O2 Gas Mixtures with Electron Cyclotron Resonance Plasma”, Journal of The Electrochemical Society, 148(5) pp. G237-G240, 2001 https://iopscience.iop.org/article/10.1149/1.1359204/meta
14) K. H. Park, Sangsuk Lee, K.-H. Kwon, and Jong H. Moon, “The effect of CF4 and CHF3 gas on the etching characteristics of Er-doped glass”, Journal of Materials Science Letters, Vol 20(6), pp. 565-568, 1 March, 2001 https://link.springer.com/article/10.1023/A:1010945004119
15) Chang-Seok Oh, Chang-Il Kim, and Kwang-Ho Kwon, “Etch Characteristics of CeO2 Thin Films as a Buffer Layer for the Application of FRAM”, J. Vac. Sci, Technol. A19(4), pp. 1068 – 1071, Jul/Aug, 2001 https://doi.org/10.1116/1.1376703
16) Kwang-Ho Kwon, Seung-Youl Kang, Sang-Kyun Lee, Nam-Kwan Hong, Sahn Nahm, and Young-Sik Kim, “Etching Characteristics of Ba(Mg1/3Ta2/3)O3 film by using Cl2/SF6-electron cyclotron resonance plasma”, Journal of The Electrochemical Society, 149, 5 C280-C283, 2002 https://iopscience.iop.org/article/10.1149/1.1469032/meta
17) Kwang-Ho Kwon, Seung-Youl Kang, and Nam-Kwan Hong, “Etch Characteristics of Pt by using BCl3/Cl2 Gas Mixtures”, Journal of Materials Science: Materials in Electronics, 13 (2002) 187-191 https://link.springer.com/article/10.1023/A:1014872314719
18) Sung-Ku Kwon, Kwang-Ho Kwon, Byung-Whan Kim, Jong-Moon Park, Seong-Wook Yoo, Kun-Sik Park, Yoon-Kyu Bae, and Bo-Woo Kim, “Characterization of via etch in CHF3/CF4 magnetically enhanced reactive ion etching using neural networks” ETRI Journal, Vol. 24, No. 3, pp. 211-220, June 2002 https://doi.org/10.4218/etrij.02.0102.0305
19) Dong-Pyo Kim, Chang-Il Kim, and Kwang-Ho Kwon, “Etching Properties of ZnS thin films in Cl2/CF4/Ar plasma”, Thin Solid Films, 459 (2004) pp. 131–136, Issues 1-2, 1 July, 2004 https://doi.org/10.1016/j.tsf.2003.12.128
20) Sun Jin Yun, Kwang-Ho Kwon, Yong-Eui Lee, and Chang-Il Kim, “Etching Characteristics of Manganese-doped Zinc Sulfide Film by Using Cl2/CF4-Inductively Coupled Plasma”, Japanese Journal of Applied Physics, Vol. 43, no. 5A, 2004, pp. 2716-2720 https://iopscience.iop.org/article/10.1143/JJAP.43.2716/meta
21) Gwan-Ha Kim, Kyoung-Tae Kim, Dong-Pyo Kim, Chang-Il Kim, Chi-Sun Park and Kwang-Ho Kwon, “Study on the Etch Characteristics of BST Thin Films by Using Inductively Coupled Plasma”, Journal of the Korean Physical Society, Vol. 45, December 2004, pp. S724-S727 https://www.koreascience.or.kr/article/CFKO200425363156267.page
22) Jun-Kyu Yang, Hyung-Ho Park and Kwang-Ho Kwon “Band offset control of Gd2O3/n-GaAs (001) structure by incorporation of SiO2” Thin Solid Films, Volume 484, Issues 1-2, 22 July 2005, Pages 415-419 https://doi.org/10.1016/j.tsf.2005.02.005
23) Nam-Ki Min, Mansu Kim and Kwang-Ho Kwon, Alexander Efremov, Hyun Woo Lee, and Sungihl Kim, “Etch Characteristics of Ge2Sb2Te5 (GST), SiO2 and a Photoresist in an Inductively Coupled Cl2/Ar Plasma”, Journal of the Korean Physical Society, Vol. 51, No. 5, November 2007, pp. 1686_1694 https://doi.org/10.3938/jkps.51.1686
24) Kwang-Ho Kwon, Nam-Ki Min, Seung-Youl Kang, Kyu-Ha Baek, Kyung Soo Suh, and Dmitriy Alexandrovich Shutov, “Kinetics of Chemical Changes in Phenol Formaldehyde Based Polymeric Films Etched in N2O and O2 Inductively Coupled Plasmas: A Comparative Study”, Japanese Journal of Applied Physics 48 (2009) https://doi.org/10.1143/JJAP.48.08HA02
25) Byungwhan Kim, Sang Hee Kwon, Kwang-Ho Kwon, Kyu-Ha Baek, Jin Ho Lee, Dong Hwan Kim, and Gary S. May, “Statistical Characterization of Process-Induced Plasma Damage”, Materials and Manufacturing Processes, 24: 610–614, 2009 https://doi.org/10.1080/10426910902768915
26) Nomin Lim, Il Ki Han, Young-Hwan Kim, Hyun Woo Lee, Yunsung Cho, Jeong-Su Kim, Yeon-Ho Im and Kwang-Ho Kwon, “Abnomal characteristics of etched profile on thick dielectrics for MEMS in inductively coupled plasma”, Vacuum, 166, 45-49 (2019) https://doi.org/10.1016/j.vacuum.2019.04.054
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